DF11MR12W1M1B11BOMA1

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Fabrikant beschwéiert Part	DF11MR12W1M1B11BOMA1
Fabrikant beschwéiert	Rochester Electronics
Beschreiwung	IGBT MODULE
Kategorie	diskret semiconductor Produiten
Famill	transistors - fets, mosfets - arrays
Liewenszyklus:	New from this manufacturer.
Liwwerung:	DHL FedEx Ups TNT EMS
Bezuelen	T/T Paypal Visa MoneyGram Western Union
Datasheet	DF11MR12W1M1B11BOMA1 PDF

Disponibilitéit

Op Lager	83
Eenzelpräis	$ 120.00000

DF11MR12W1M1B11BOMA1 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

DF11MR12W1M1B11BOMA1 Spezifikatioune

Typ	Beschreiwung
Serie:	*
Package:	Bulk
Deel Status:	Active
fet Typ:	2 N-Channel (Dual)
fet Fonktioun:	Silicon Carbide (SiC)
drain to source voltage (vdss):	1200V (1.2kV)
aktuell - kontinuéierlech drain (id) @ 25 ° c:	50A
rds op (max) @ id, vgs:	23mOhm @ 50A, 15V
vgs(th) (max) @ id:	5.5V @ 20mA
Gate charge (qg) (max) @ vgs:	125nC @ 5V
Input Kapazitéit (ciss) (max) @ vds:	3950pF @ 800V
Muecht - max:	20mW
Betribssystemer Temperatur:	-40°C ~ 150°C (TJ)
Montéierung Typ:	Chassis Mount
Package / Fall:	Module
Fournisseur Apparat Package:	Module

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.