TK100E06N1,S1X

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Fabrikant beschwéiert Part	TK100E06N1,S1X
Fabrikant beschwéiert	Toshiba Electronic Devices and Storage Corporation
Beschreiwung	MOSFET N CH 60V 100A TO-220
Kategorie	diskret semiconductor Produiten
Famill	transistors - fets, mosfets - eenzel
Liewenszyklus:	New from this manufacturer.
Liwwerung:	DHL FedEx Ups TNT EMS
Bezuelen	T/T Paypal Visa MoneyGram Western Union
Datasheet	TK100E06N1,S1X PDF

Disponibilitéit

Op Lager	932450
Eenzelpräis	$ 2.62000

TK100E06N1,S1X Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

TK100E06N1,S1X Spezifikatioune

Typ	Beschreiwung
Serie:	U-MOSVIII-H
Package:	Tube
Deel Status:	Active
fet Typ:	N-Channel
Technologie:	MOSFET (Metal Oxide)
drain to source voltage (vdss):	60 V
aktuell - kontinuéierlech drain (id) @ 25 ° c:	100A (Ta)
Fuertspannung (max rds on, min rds on):	10V
rds op (max) @ id, vgs:	2.3mOhm @ 50A, 10V
vgs(th) (max) @ id:	4V @ 1mA
Gate charge (qg) (max) @ vgs:	140 nC @ 10 V
vgs (max):	±20V
Input Kapazitéit (ciss) (max) @ vds:	10500 pF @ 30 V
fet Fonktioun:	-
Energieverbrauch (max):	255W (Tc)
Betribssystemer Temperatur:	150°C (TJ)
Montéierung Typ:	Through Hole
Fournisseur Apparat Package:	TO-220
Package / Fall:	TO-220-3

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.