TW070J120B,S1Q

Bild ass fir Referenz, kontaktéiert eis w.e.g. fir dat richtegt Bild ze kréien

Fabrikant beschwéiert Part	TW070J120B,S1Q
Fabrikant beschwéiert	Toshiba Electronic Devices and Storage Corporation
Beschreiwung	SICFET N-CH 1200V 36A TO3P
Kategorie	diskret semiconductor Produiten
Famill	transistors - fets, mosfets - eenzel
Liewenszyklus:	New from this manufacturer.
Liwwerung:	DHL FedEx Ups TNT EMS
Bezuelen	T/T Paypal Visa MoneyGram Western Union

Disponibilitéit

Op Lager	273
Eenzelpräis	$ 33.97000

TW070J120B,S1Q Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

TW070J120B,S1Q Spezifikatioune

Typ	Beschreiwung
Serie:	*
Package:	Tube
Deel Status:	Active
fet Typ:	N-Channel
Technologie:	SiCFET (Silicon Carbide)
drain to source voltage (vdss):	1200 V
aktuell - kontinuéierlech drain (id) @ 25 ° c:	36A (Tc)
Fuertspannung (max rds on, min rds on):	20V
rds op (max) @ id, vgs:	90mOhm @ 18A, 20V
vgs(th) (max) @ id:	5.8V @ 20mA
Gate charge (qg) (max) @ vgs:	67 nC @ 20 V
vgs (max):	±25V, -10V
Input Kapazitéit (ciss) (max) @ vds:	1680 pF @ 800 V
fet Fonktioun:	Standard
Energieverbrauch (max):	272W (Tc)
Betribssystemer Temperatur:	-55°C ~ 175°C
Montéierung Typ:	Through Hole
Fournisseur Apparat Package:	TO-3P(N)
Package / Fall:	TO-3P-3, SC-65-3

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.