IPB80N06S207ATMA4

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Fabrikant beschwéiert Part	IPB80N06S207ATMA4
Fabrikant beschwéiert	Rochester Electronics
Beschreiwung	MOSFET N-CH 55V 80A TO263-3-2
Kategorie	diskret semiconductor Produiten
Famill	transistors - fets, mosfets - eenzel
Liewenszyklus:	New from this manufacturer.
Liwwerung:	DHL FedEx Ups TNT EMS
Bezuelen	T/T Paypal Visa MoneyGram Western Union
Datasheet	IPB80N06S207ATMA4 PDF

Disponibilitéit

Op Lager	35000
Eenzelpräis	$ 1.02000

IPB80N06S207ATMA4 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IPB80N06S207ATMA4 Spezifikatioune

Typ	Beschreiwung
Serie:	OptiMOS™
Package:	Bulk
Deel Status:	Active
fet Typ:	N-Channel
Technologie:	MOSFET (Metal Oxide)
drain to source voltage (vdss):	55 V
aktuell - kontinuéierlech drain (id) @ 25 ° c:	80A (Tc)
Fuertspannung (max rds on, min rds on):	10V
rds op (max) @ id, vgs:	6.3mOhm @ 68A, 10V
vgs(th) (max) @ id:	4V @ 180µA
Gate charge (qg) (max) @ vgs:	110 nC @ 10 V
vgs (max):	±20V
Input Kapazitéit (ciss) (max) @ vds:	3.4 pF @ 25 V
fet Fonktioun:	-
Energieverbrauch (max):	250W (Tc)
Betribssystemer Temperatur:	-55°C ~ 175°C (TJ)
Montéierung Typ:	Surface Mount
Fournisseur Apparat Package:	PG-TO263-3-2
Package / Fall:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.