SI2305CDS-T1-GE3

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Fabrikant beschwéiert Part	SI2305CDS-T1-GE3
Fabrikant beschwéiert	Vishay / Siliconix
Beschreiwung	MOSFET P-CH 8V 5.8A SOT23-3
Kategorie	diskret semiconductor Produiten
Famill	transistors - fets, mosfets - eenzel
Liewenszyklus:	New from this manufacturer.
Liwwerung:	DHL FedEx Ups TNT EMS
Bezuelen	T/T Paypal Visa MoneyGram Western Union
Datasheet	SI2305CDS-T1-GE3 PDF

Disponibilitéit

Op Lager	1474
Eenzelpräis	$ 0.48000

SI2305CDS-T1-GE3 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SI2305CDS-T1-GE3 Spezifikatioune

Typ	Beschreiwung
Serie:	TrenchFET®
Package:	Tape & Reel (TR)Cut Tape (CT)
Deel Status:	Active
fet Typ:	P-Channel
Technologie:	MOSFET (Metal Oxide)
drain to source voltage (vdss):	8 V
aktuell - kontinuéierlech drain (id) @ 25 ° c:	5.8A (Tc)
Fuertspannung (max rds on, min rds on):	1.8V, 4.5V
rds op (max) @ id, vgs:	35mOhm @ 4.4A, 4.5V
vgs(th) (max) @ id:	1V @ 250µA
Gate charge (qg) (max) @ vgs:	30 nC @ 8 V
vgs (max):	±8V
Input Kapazitéit (ciss) (max) @ vds:	960 pF @ 4 V
fet Fonktioun:	-
Energieverbrauch (max):	960mW (Ta), 1.7W (Tc)
Betribssystemer Temperatur:	-55°C ~ 150°C (TJ)
Montéierung Typ:	Surface Mount
Fournisseur Apparat Package:	SOT-23-3 (TO-236)
Package / Fall:	TO-236-3, SC-59, SOT-23-3

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.