IMW120R030M1HXKSA1

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Fabrikant beschwéiert Part	IMW120R030M1HXKSA1
Fabrikant beschwéiert	IR (Infineon Technologies)
Beschreiwung	SICFET N-CH 1.2KV 56A TO247-3
Kategorie	diskret semiconductor Produiten
Famill	transistors - fets, mosfets - eenzel
Liewenszyklus:	New from this manufacturer.
Liwwerung:	DHL FedEx Ups TNT EMS
Bezuelen	T/T Paypal Visa MoneyGram Western Union
Datasheet	IMW120R030M1HXKSA1 PDF

Disponibilitéit

Op Lager	668
Eenzelpräis	$ 22.83000

IMW120R030M1HXKSA1 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IMW120R030M1HXKSA1 Spezifikatioune

Typ	Beschreiwung
Serie:	CoolSiC™
Package:	Tube
Deel Status:	Active
fet Typ:	N-Channel
Technologie:	SiCFET (Silicon Carbide)
drain to source voltage (vdss):	1.2 kV
aktuell - kontinuéierlech drain (id) @ 25 ° c:	56A (Tc)
Fuertspannung (max rds on, min rds on):	15V, 18V
rds op (max) @ id, vgs:	40mOhm @ 25A, 18V
vgs(th) (max) @ id:	5.7V @ 10mA
Gate charge (qg) (max) @ vgs:	63 nC @ 18 V
vgs (max):	+23V, -7V
Input Kapazitéit (ciss) (max) @ vds:	2.12 nF @ 800 V
fet Fonktioun:	-
Energieverbrauch (max):	227W (Tc)
Betribssystemer Temperatur:	-55°C ~ 175°C (TJ)
Montéierung Typ:	Through Hole
Fournisseur Apparat Package:	PG-TO247-3-41
Package / Fall:	TO-247-3

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.