IMBG120R090M1HXTMA1

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Fabrikant beschwéiert Part	IMBG120R090M1HXTMA1
Fabrikant beschwéiert	IR (Infineon Technologies)
Beschreiwung	TRANS SJT N-CH 1.2KV 26A TO263
Kategorie	diskret semiconductor Produiten
Famill	transistors - fets, mosfets - eenzel
Liewenszyklus:	New from this manufacturer.
Liwwerung:	DHL FedEx Ups TNT EMS
Bezuelen	T/T Paypal Visa MoneyGram Western Union
Datasheet	IMBG120R090M1HXTMA1 PDF

Disponibilitéit

Op Lager	466828
Eenzelpräis	$ 14.47000

IMBG120R090M1HXTMA1 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IMBG120R090M1HXTMA1 Spezifikatioune

Typ	Beschreiwung
Serie:	CoolSiC™
Package:	Tape & Reel (TR)Cut Tape (CT)
Deel Status:	Active
fet Typ:	N-Channel
Technologie:	SiC (Silicon Carbide Junction Transistor)
drain to source voltage (vdss):	1.2 kV
aktuell - kontinuéierlech drain (id) @ 25 ° c:	26A (Tc)
Fuertspannung (max rds on, min rds on):	-
rds op (max) @ id, vgs:	125mOhm @ 8.5A, 18V
vgs(th) (max) @ id:	5.7V @ 3.7mA
Gate charge (qg) (max) @ vgs:	23 nC @ 18 V
vgs (max):	+18V, -15V
Input Kapazitéit (ciss) (max) @ vds:	763 pF @ 800 V
fet Fonktioun:	Standard
Energieverbrauch (max):	136W (Tc)
Betribssystemer Temperatur:	-55°C ~ 175°C (TJ)
Montéierung Typ:	Surface Mount
Fournisseur Apparat Package:	PG-TO263-7-12
Package / Fall:	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.