IPAN60R210PFD7SXKSA1

Bild ass fir Referenz, kontaktéiert eis w.e.g. fir dat richtegt Bild ze kréien

Fabrikant beschwéiert Part	IPAN60R210PFD7SXKSA1
Fabrikant beschwéiert	IR (Infineon Technologies)
Beschreiwung	MOSFET N-CH 650V 16A TO220
Kategorie	diskret semiconductor Produiten
Famill	transistors - fets, mosfets - eenzel
Liewenszyklus:	New from this manufacturer.
Liwwerung:	DHL FedEx Ups TNT EMS
Bezuelen	T/T Paypal Visa MoneyGram Western Union

Disponibilitéit

Op Lager	940
Eenzelpräis	$ 1.94000

IPAN60R210PFD7SXKSA1 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IPAN60R210PFD7SXKSA1 Spezifikatioune

Typ	Beschreiwung
Serie:	CoolMOS™PFD7
Package:	Tube
Deel Status:	Active
fet Typ:	N-Channel
Technologie:	MOSFET (Metal Oxide)
drain to source voltage (vdss):	650 V
aktuell - kontinuéierlech drain (id) @ 25 ° c:	16A (Tc)
Fuertspannung (max rds on, min rds on):	10V
rds op (max) @ id, vgs:	210mOhm @ 4.9A, 10V
vgs(th) (max) @ id:	4.5V @ 240µA
Gate charge (qg) (max) @ vgs:	23 nC @ 10 V
vgs (max):	±20V
Input Kapazitéit (ciss) (max) @ vds:	1015 pF @ 400 V
fet Fonktioun:	-
Energieverbrauch (max):	25W (Tc)
Betribssystemer Temperatur:	-40°C ~ 150°C (TJ)
Montéierung Typ:	Through Hole
Fournisseur Apparat Package:	PG-TO220 Full Pack
Package / Fall:	TO-220-3 Full Pack

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.