IPP037N08N3GXKSA1

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Fabrikant beschwéiert Part	IPP037N08N3GXKSA1
Fabrikant beschwéiert	IR (Infineon Technologies)
Beschreiwung	MOSFET N-CH 80V 100A TO220-3
Kategorie	diskret semiconductor Produiten
Famill	transistors - fets, mosfets - eenzel
Liewenszyklus:	New from this manufacturer.
Liwwerung:	DHL FedEx Ups TNT EMS
Bezuelen	T/T Paypal Visa MoneyGram Western Union
Datasheet	IPP037N08N3GXKSA1 PDF

Disponibilitéit

Op Lager	626504
Eenzelpräis	$ 3.05000

IPP037N08N3GXKSA1 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IPP037N08N3GXKSA1 Spezifikatioune

Typ	Beschreiwung
Serie:	OptiMOS™
Package:	Tube
Deel Status:	Active
fet Typ:	N-Channel
Technologie:	MOSFET (Metal Oxide)
drain to source voltage (vdss):	80 V
aktuell - kontinuéierlech drain (id) @ 25 ° c:	100A (Tc)
Fuertspannung (max rds on, min rds on):	6V, 10V
rds op (max) @ id, vgs:	3.75mOhm @ 100A, 10V
vgs(th) (max) @ id:	3.5V @ 155µA
Gate charge (qg) (max) @ vgs:	117 nC @ 10 V
vgs (max):	±20V
Input Kapazitéit (ciss) (max) @ vds:	8110 pF @ 40 V
fet Fonktioun:	-
Energieverbrauch (max):	214W (Tc)
Betribssystemer Temperatur:	-55°C ~ 175°C (TJ)
Montéierung Typ:	Through Hole
Fournisseur Apparat Package:	PG-TO220-3
Package / Fall:	TO-220-3

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.