HGTG27N120BN

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Fabrikant beschwéiert Part	HGTG27N120BN
Fabrikant beschwéiert	Sanyo Semiconductor/ON Semiconductor
Beschreiwung	IGBT NPT 1200V 72A TO247-3
Kategorie	diskret semiconductor Produiten
Famill	transistors - igbts - Single
Liewenszyklus:	New from this manufacturer.
Liwwerung:	DHL FedEx Ups TNT EMS
Bezuelen	T/T Paypal Visa MoneyGram Western Union
Datasheet	HGTG27N120BN PDF

Disponibilitéit

Op Lager	325
Eenzelpräis	$ 6.91000

HGTG27N120BN Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

HGTG27N120BN Spezifikatioune

Typ	Beschreiwung
Serie:	-
Package:	Tube
Deel Status:	Not For New Designs
igbt Typ:	NPT
Spannung - Kollektor Emitter Decompte (max):	1200 V
aktuell - Sammler (ic) (max):	72 A
Stroum - Sammler gepulst (ICM):	216 A
vce(an) (max) @ vge, ic:	2.7V @ 15V, 27A
Muecht - max:	500 W
Energie wiesselen:	2.2mJ (on), 2.3mJ (off)
Input Typ:	Standard
Gate charge:	270 nC
td (an/aus) @ 25°c:	24ns/195ns
Test Zoustand:	960V, 27A, 3Ohm, 15V
ëmgedréint Erhuelung Zäit (trr):	-
Betribssystemer Temperatur:	-55°C ~ 150°C (TJ)
Montéierung Typ:	Through Hole
Package / Fall:	TO-247-3
Fournisseur Apparat Package:	TO-247-3

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