HGTP5N120BND

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Fabrikant beschwéiert Part	HGTP5N120BND
Fabrikant beschwéiert	Sanyo Semiconductor/ON Semiconductor
Beschreiwung	IGBT 1200V 21A 167W TO220AB
Kategorie	diskret semiconductor Produiten
Famill	transistors - igbts - Single
Liewenszyklus:	New from this manufacturer.
Liwwerung:	DHL FedEx Ups TNT EMS
Bezuelen	T/T Paypal Visa MoneyGram Western Union
Datasheet	HGTP5N120BND PDF

Disponibilitéit

Op Lager	384714
Eenzelpräis	$ 1.38624

HGTP5N120BND Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

HGTP5N120BND Spezifikatioune

Typ	Beschreiwung
Serie:	-
Package:	Tube
Deel Status:	Not For New Designs
igbt Typ:	NPT
Spannung - Kollektor Emitter Decompte (max):	1200 V
aktuell - Sammler (ic) (max):	21 A
Stroum - Sammler gepulst (ICM):	40 A
vce(an) (max) @ vge, ic:	2.7V @ 15V, 5A
Muecht - max:	167 W
Energie wiesselen:	450µJ (on), 390µJ (off)
Input Typ:	Standard
Gate charge:	53 nC
td (an/aus) @ 25°c:	22ns/160ns
Test Zoustand:	960V, 5A, 25Ohm, 15V
ëmgedréint Erhuelung Zäit (trr):	65 ns
Betribssystemer Temperatur:	-55°C ~ 150°C (TJ)
Montéierung Typ:	Through Hole
Package / Fall:	TO-220-3
Fournisseur Apparat Package:	TO-220-3

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.