GT10J312(Q)

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Fabrikant beschwéiert Part	GT10J312(Q)
Fabrikant beschwéiert	Toshiba Electronic Devices and Storage Corporation
Beschreiwung	IGBT 600V 10A 60W TO220SM
Kategorie	diskret semiconductor Produiten
Famill	transistors - igbts - Single
Liewenszyklus:	New from this manufacturer.
Liwwerung:	DHL FedEx Ups TNT EMS
Bezuelen	T/T Paypal Visa MoneyGram Western Union
Datasheet	GT10J312(Q) PDF

Disponibilitéit

Op Lager	926320
Eenzelpräis	$ 0.00000

GT10J312(Q) Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

GT10J312(Q) Spezifikatioune

Typ	Beschreiwung
Serie:	-
Package:	Tube
Deel Status:	Obsolete
igbt Typ:	-
Spannung - Kollektor Emitter Decompte (max):	600 V
aktuell - Sammler (ic) (max):	10 A
Stroum - Sammler gepulst (ICM):	20 A
vce(an) (max) @ vge, ic:	2.7V @ 15V, 10A
Muecht - max:	60 W
Energie wiesselen:	-
Input Typ:	Standard
Gate charge:	-
td (an/aus) @ 25°c:	400ns/400ns
Test Zoustand:	300V, 10A, 100Ohm, 15V
ëmgedréint Erhuelung Zäit (trr):	200 ns
Betribssystemer Temperatur:	150°C (TJ)
Montéierung Typ:	Surface Mount
Package / Fall:	TO-252-3, DPak (2 Leads + Tab), SC-63
Fournisseur Apparat Package:	TO-220SM

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.

Shipping Methods

We provide DHL, FedEx, UPS, EMS, SF Express, and Registered Air Mail international shipping.

Payment

TT in advance (bank transfer), Western Union,PayPal. Customer is responsible for shipping fee, bank charges, duties and taxes.

$ 0.00000