GPA030A135MN-FDR

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Fabrikant beschwéiert Part	GPA030A135MN-FDR
Fabrikant beschwéiert	SemiQ
Beschreiwung	IGBT 1350V 60A 329W TO3PN
Kategorie	diskret semiconductor Produiten
Famill	transistors - igbts - Single
Liewenszyklus:	New from this manufacturer.
Liwwerung:	DHL FedEx Ups TNT EMS
Bezuelen	T/T Paypal Visa MoneyGram Western Union
Datasheet	GPA030A135MN-FDR PDF

Disponibilitéit

Op Lager	771939
Eenzelpräis	$ 0.00000

GPA030A135MN-FDR Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

GPA030A135MN-FDR Spezifikatioune

Typ	Beschreiwung
Serie:	-
Package:	Tube
Deel Status:	Obsolete
igbt Typ:	Trench Field Stop
Spannung - Kollektor Emitter Decompte (max):	1350 V
aktuell - Sammler (ic) (max):	60 A
Stroum - Sammler gepulst (ICM):	90 A
vce(an) (max) @ vge, ic:	2.4V @ 15V, 30A
Muecht - max:	329 W
Energie wiesselen:	4.4mJ (on), 1.18mJ (off)
Input Typ:	Standard
Gate charge:	300 nC
td (an/aus) @ 25°c:	30ns/145ns
Test Zoustand:	600V, 30A, 5Ohm, 15V
ëmgedréint Erhuelung Zäit (trr):	450 ns
Betribssystemer Temperatur:	-55°C ~ 150°C (TJ)
Montéierung Typ:	Through Hole
Package / Fall:	TO-3
Fournisseur Apparat Package:	TO-3PN

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.