BSM400D12P2G003

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Fabrikant beschwéiert Part	BSM400D12P2G003
Fabrikant beschwéiert	ROHM Semiconductor
Beschreiwung	SILICON CARBIDE POWER MODULE. B
Kategorie	diskret semiconductor Produiten
Famill	transistors - fets, mosfets - arrays
Liewenszyklus:	New from this manufacturer.
Liwwerung:	DHL FedEx Ups TNT EMS
Bezuelen	T/T Paypal Visa MoneyGram Western Union

Disponibilitéit

Op Lager	4
Eenzelpräis	$ 2142.86000

BSM400D12P2G003 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

BSM400D12P2G003 Spezifikatioune

Typ	Beschreiwung
Serie:	-
Package:	Bulk
Deel Status:	Active
fet Typ:	2 N-Channel (Half Bridge)
fet Fonktioun:	Silicon Carbide (SiC)
drain to source voltage (vdss):	1200V (1.2kV)
aktuell - kontinuéierlech drain (id) @ 25 ° c:	400A (Tc)
rds op (max) @ id, vgs:	-
vgs(th) (max) @ id:	4V @ 85mA
Gate charge (qg) (max) @ vgs:	-
Input Kapazitéit (ciss) (max) @ vds:	38000pF @ 10V
Muecht - max:	2450W (Tc)
Betribssystemer Temperatur:	-40°C ~ 150°C (TJ)
Montéierung Typ:	-
Package / Fall:	Module
Fournisseur Apparat Package:	Module

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.